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| Crystal oscillator FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-51 series * Pin compatible with full-size metal can. HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR SG-531 series * Pin compatible with half-size metal can. Common * Cylindrical AT-cut crystal unit builtin, thus assuring high reliability. * Use of C-MOS IC enables reduction of current consumption. Specifications (characteristics) Item Output frequency range Power source voltage Symbol f0 SG-51P/531P 1.0250 MHz to 26.0000 MHz SG-51PTJ/531PTJ Specifications SG-51PH/531PH Remarks 26.0001 MHz to 66.6667 MHz -0.3 V to +7.0 V 5.0 V0.5 V Max. supply voltage VDD-GND VDD Operating voltage TSTG Temperature Storage temperature range TOPR Operating temperature Soldering condition (lead part) TSOL Frequency stability Current consumption C-MOS level Duty TTL level Output voltage C-MOS TTL f/f0 Iop tw/t VOH (IOH) VOL (IOL) CL N VIH VIL IOE tTLH tTHL tOSC fa S.R. -0.5 V to +7.0 V Output load condition (fan out) Output enable/disable input voltage Output disable current C-MOS level Output rise time TTL level C-MOS level Output TTL level fall time Oscillation start up time Aging Shock resistance -55 C to +125 C -20 C to +70 C (-40 C to +85 C) Under +260 C within 10 s B: 50 x 10-6 C: 100 x 10-6 23 mA Max. 35 mA Max. 40 % to 60 % -- 40 % to 60 % 45 % to 55 % -- VDD-0.4 V Min. 2.4 V Min. VDD -0.4 V Min. -400 A -4 mA 0.4 V Max. 16 mA 8 mA 4 mA 50 pF Max. -- 50 pF Max. 10 TTL Max. 5 TTL Max. -- 2.0 V Min. 3.5 V Min. 2.0 V Min. 0.8 V Max. 1.5 V Max. 0.8 V Max. 12 mA Max. 28 mA Max. 20 mA Max. -- 7 ns Max. 8 ns Max. 5 ns Max. -- -- 7 ns Max. 8 ns Max. 5 ns Max. -- 4 ms Max. 10 ms Max. 5 x 10-6/year Max. 20 x 10-6 Max. Please contact us on availability of -40 C to +85 C Don't heat the package at more than +150 C B type is possible up to 55.0 MHz No load condition 1/2 VDD level 1.4 V level CL15 pF IIH=1 A Max. (OE=VDD) IIL= -100 A Min. (OE=GND), PTJ: -500 A OE=GND C-MOS load: 20 %80 % VDD TTL load: 0.4 V2.4 V C-MOS load: 80 %20 % VDD TTL load: 2.4 V0.4 V More than for 1 ms until VDD =0 V4.5 V Time at 4.5 V to be 0 s Ta=+25 C, VDD =5 V,first year Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Note: * Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition. * External by-pass capacitor is recommended. External dimensions SG-51 series 19.8 Max. #14 #8 6.36 (Unit: mm) NO. Pin terminal 1 7 8 14 OE GND OUT VDD SG-531 series 13.7 Max. #8 #5 NO. Pin terminal 1 4 5 8 6.6 OE GND OUT VDD E SG51PH 6052A 32.0000MHz C #1 #7 0.2 Min. SG531PTJC 20.0000M E 9353B #1 #4 0.2 Min. 7.62 5.3 Max. 2.54 Min. 5.3 Max. 7.62 2.54 Min. 0.51 15.24 0.25 90 to 105 0.51 7.62 90 to 105 0.25 31 Crystal oscillator Actual size Specifications (characteristics) Item Output frequency range Symbol f0 SG-531PTW/STW SG-531PHW/SHW Specifications SG-531PCW/SCW 26.0001 MHz to 135.0000 MHz Remarks 55.0001 MHz to 135.0000 MHz Power source Max. supply voltage VDD-GND VDD voltage Operating voltage TSTG Temperature Storage temperature TOPR range Operating temperature TSOL Soldering condition (lead part) Frequency stability Current consumption Output disable current Output disable current C-MOS level Duty TTL level Output voltage f/f0 Iop IoE IST tw/t VOH VOL CL VIH VIL tTLH tTHL tOSC fa S.R. Output load condition (fan out) Output enable disable input voltage C-MOS level Output TTL level rise time C-MOS level Output TTL level fall time Oscillation start up time Aging Shock resistance -0.5 V to +7.0 V 5.0 V0.5 V 3.3 V0.3 V -55 C to +125 C -20 C to +70 C -40 C to +85 C Under +260 C within 10 s C: 100 x 10-6 B: 50 x 10-6 M: 100 x 10-6 45 mA Max. 28 mA Max. 30 mA Max. 16 mA Max. 50 A Max. -- 40 % to 60 % 40 % to 60 % -- VDD-0.4 V Min. 0.4 V Max. 15 pF Max. 0.7 VDD Min. 2.0 V Min. 0.2 VDD Min. 0.8 V Max. -- 4 ns Max. 4 ns Max. 4 ns Max. -- -- -- 4 ns Max. 4 ns Max. 4 ns Max. -- -- 10 ms Max. 5 x 10-6/year Max. 20 x 10-6 Max. Don't heat the package at more than +150 C -20 C to +70 C -40 C to +85 C No load condition OE=GND(P*W) ST=GND(S*W) C-MOS load: 1/2VDD TTL load: 1.4 V IOH= -16 mA (*TW/HW)/-8 mA(*CW) IOL= -16 mA (*TW/HW)/8 mA(*CW) OE,ST OE,ST C-MOS load: 20 %80 % VDD TTL load: 0.4 V2.4 V C-MOS load: 80 %20 % VDD TTL load: 2.4 V0.4 V Time at 4.5 V to be 0 s Ta=+25 C, VDD =5 V Three drops on a hard board from 750 mm or excitation test with 29400 m/s2 x 0.3 ms x 1/2 sine wave in 3 directions Operating condition and Frequency band Operating condition Frequency stability:B ( -20 to +70 C) Frequency stability:C ( -20 to +70 C) Frequency stability:B ( -20 to +70 C) 3.3 V0.3 V Frequency stability:C ( -20 to +70 C) Frequency stability:M ( -40 to +85 C) 1 MHz 1.025 SG-51/531P 1.025 SG-51/531P 26 SG-531PCW/SCW 26 SG-531PCW/SCW 26 SG-531PCW/SCW 135 135 26 SG-51/531PTJ/PH 26 66.6667 SG-51/531PTJ/PH SG-531PTW/STW/PHW/SHW 135 50 MHz 55 SG-531PTW/STW/PHW/SHW 135 100 MHz 150 MHz 135 5 V0.5 V 32 |
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